Power feeding device, electronic device, and operation method of power feeding device

ABSTRACT

Deterioration of a storage battery included in an electronic device is reduced. Power consumption of an electronic device is reduced. A power feeding device having excellent performance is provided. The power feeding device includes a power feeding coil, a control circuit, and a neural network and has a function of charging a storage battery with a wireless signal supplied by the power feeding coil. The control circuit has a function of estimating a remaining capacity value of the storage battery, the control circuit has a function of supplying the estimated remaining capacity value to the neural network, the neural network outputs a value corresponding to the supplied remaining capacity value to the control circuit, the control circuit determines a charge condition for the storage battery on the basis of the value output by the neural network, and the power feeding device has a function of charging the storage batten under the determined charge condition.

TECHNICAL FIELD

One embodiment of the present invention relates to a power feedingdevice. Another embodiment of the present invention relates to a powerfeeding device that has a function of wireless communication. Anotherembodiment of the present invention relates to an electronic device thatuses a storage battery.

Another embodiment of the present invention relates to a semiconductordevice.

Another embodiment of the present invention relates to a neural networkand a power feeding device that uses the neural network. Anotherembodiment of the present invention relates to an electronic device thatuses a neural network.

In this specification and the like, a semiconductor device generallymeans a device that can function by utilizing semiconductorcharacteristics. A display device, alight-emitting device, a memorydevice, an electro-optical device, a power storage device, asemiconductor circuit, and an electronic device include a semiconductordevice in some cases.

Note that one embodiment of the present invention is not limited to theabove technical field. The technical field of the invention disclosed inthis specification and the like relates to an object, a method, or amanufacturing method. One embodiment of the present invention relates toa process, a machine, manufacture, or a composition of matter.

BACKGROUND ART

A technique of feeding power to an electronic device or other objects ina state where the object is not in contact with a power supply source,such as wireless power feeding, is commonly used. Wireless power feedingenables easy feeding of power without connection to a terminal. PatentDocument 1 discloses an example of performing power feeding andcommunication by utilizing a magnetic resonance method and furtherdiscloses an example of a power feeding system that can be used betweena power transmission device and each power reception device included ina mobile phone or a portable information terminal.

In recent years, transistors using oxide semiconductors or metal oxidesin their channel formation regions (Oxide Semiconductor transistors,hereinafter referred to as OS transistors) have attracted attention. Theoff-state current of an OS transistor is extremely low. Applicationsthat employ OS transistors to utilize their extremely low off-statecurrents have been proposed. For example, Patent Document 2 discloses anexample in which an OS transistor is used for learning in a neuralnetwork.

REFERENCES Patent Document

[Patent Document 1] Japanese Published Patent Application No.2013-128394

[Patent Document 2] Japanese Published Patent Application No.2016-219011

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

An object of one embodiment of the present invention is to reducedeterioration of a storage battery included in an electronic device.Another object of one embodiment of the present invention is to reducepower consumption of an electronic device.

Another object of one embodiment of the present invention is to providea power feeding device having excellent performance. Another object ofone embodiment of the present invention is to provide a power feedingdevice that can suppress deterioration of a storage battery. Anotherobject of one embodiment of the present invention is to provide a powerfeeding device that can efficiently charge a plurality of storagebatteries. Another object of one embodiment of the present invention isto provide an operation method of a power feeding device, by whichdeterioration of a storage battery can be suppressed.

Another object of one embodiment of the present invention is to providea novel semiconductor device. Another object of one embodiment of thepresent invention is to provide a novel system.

Note that the descriptions of a plurality of objects do not mutuallypreclude the existence. One embodiment of the present invention does notnecessarily achieve all of these objects. Objects other than thoselisted above will be apparent from the description of the specification,the drawings, the claims, and the like, and such objects could beobjects of one embodiment of the present invention.

Means for Solving the Problems

One embodiment of the present invention is a power feeding deviceincluding a power feeding coil, a control circuit, and a neural network.The power feeding device has a function of charging a storage batterywith a wireless signal supplied by the power feeding coil, the storagebattery has a function of receiving the wireless signal from the powerfeeding coil, the control circuit has a function of estimating aremaining capacity value of the storage battery, the control circuit hasa function of supplying the estimated remaining capacity value to theneural network, the neural network outputs a value corresponding to thesupplied remaining capacity value to the control circuit, the controlcircuit determines a charge condition for the storage battery on thebasis of the value output by the neural network, and the power feedingdevice has a function of charging the storage battery under thedetermined charge condition.

Another embodiment of the present invention is a power feeding deviceincluding a power feeding coil, a control circuit, and a neural network.The power feeding device has a function of charging a first storagebattery and a second storage battery with a wireless signal supplied bythe power feeding coil, the first storage battery and the second storagebattery have a function of receiving the wireless signal from the powerfeeding coil, the control circuit has a function of estimating aremaining capacity value of the first storage battery and a remainingcapacity value of the second storage battery, the control circuit has afunction of supplying the estimated remaining capacity value of thefirst storage battery and the estimated remaining capacity value of thesecond storage battery to the neural network, the neural network outputsa first value corresponding to the supplied remaining capacity value ofthe first storage battery and a second value corresponding to theremaining capacity value of the second storage battery to the controlcircuit, and the control circuit has a function of selecting either thefirst storage battery or the second storage battery on the basis of thefirst value and the second value and charging the selected storagebattery.

Another embodiment of the present invention is a system which includesan electronic device including a storage battery and a power feedingdevice. The storage battery is charged by the power feeding device, thepower feeding device includes a power feeding coil, a control circuit,and a neural network, the power feeding device has a function ofcharging the storage battery with a wireless signal supplied by thepower feeding coil, the control circuit has a function of estimating aremaining capacity value of the storage battery, wherein the controlcircuit has a function of supplying the estimated remaining capacityvalue to the neural network, the neural network outputs a valuecorresponding to the supplied remaining capacity value to the controlcircuit, the control circuit determines a charge condition for thestorage battery on the basis of the output value, and the power feedingdevice has a function of charging the storage battery under thedetermined charge condition.

Another embodiment of the present invention is an operation method of apower feeding device comprising a power feeding coil, a control circuit,and a neural network. A plurality of storage batteries are provided inthe neighborhood of the power feeding device, each of the plurality ofstorage batteries has an individual identification number, the powerfeeding device has a function of charging at least one of the pluralityof storage batteries with a wireless signal supplied by the powerfeeding coil. A first step in which the control circuit estimates aremaining capacity value of each of the plurality of storage batteries;a second step in which the control circuit supplies each of theestimated remaining capacity values to the neural network; a third stepin which the neural network outputs values corresponding to therespective remaining capacity values to the control circuit; a fourthstep in which the control circuit selects which of the plurality ofstorage batteries to charge on the basis of the output values andcharges the selected storage battery; and a fifth step in which thecontrol circuit stops charging of the selected storage battery, areincluded. The first step to the fifth step are one cycle, and the onecycle is repeated a plurality of times. A set of data in which theindividual identification number and the remaining capacity valueestimated in the first step are linked with each other is accumulated inthe control circuit in the second step every repeated cycle, and acharge condition is determined using the accumulated set of data in thefourth step. Furthermore, it is preferable that the control circuitmeasure time of a clock included in the power feeding device or thestorage battery in the first step and that a set of data in which theindividual identification number, the remaining capacity value estimatedin the first step, and the time are linked with each other beaccumulated in the control circuit in the second step. Moreover, thecontrol circuit preferably includes a memory, and it is preferable thatthe set of data in which the individual identification number and theremaining capacity value estimated in the first step are linked witheach other be accumulated in the memory in the second step and that thememory include a transistor including a metal oxide containing indium ina channel formation region.

Effect of the Invention

With one embodiment of the present invention, deterioration of a storagebattery included in an electronic device can be reduced. Furthermore,with one embodiment of the present invention, power consumption of anelectronic device can be reduced.

Furthermore, with one embodiment of the present invention, a powerfeeding device having excellent performance can be provided.Furthermore, with one embodiment of the present invention, a powerfeeding device that can suppress deterioration of a storage battery canbe provided. Furthermore, with one embodiment of the present invention,a power feeding device that can efficiently charge a plurality ofstorage batteries can be provided. Furthermore, with one embodiment ofthe present invention, an operation method of a power feeding device, bywhich deterioration of a storage battery can be suppressed, can beprovided.

Furthermore, with one embodiment of the present invention, a novelsemiconductor device can be provided. Furthermore, with one embodimentof the present invention, a novel system can be provided.

Note that the descriptions of these effects do not disturb the existenceof other effects. One embodiment of the present invention does not haveto have all of these effects. Effects other than these will be apparentfrom the description of the specification, the drawings, the claims, andthe like, and effects other than these can be derived from thedescription of the specification, the drawings, the claims, and thelike.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 A view illustrating an example of an electronic device, a powerfeeding device, and a block.

FIG. 2 A top view and a perspective view of an electronic device and apower feeding device.

FIG. 3 A view illustrating an example of an electronic device, a powerfeeding device, and a block.

FIG. 4 A view illustrating an example of an electronic device, a powerfeeding device, and a block.

FIG. 5 A flow chart showing an operation of a power feeding device.

FIG. 6 A flow chart showing an operation of a power feeding device,

FIG. 7 Allow chart showing an operation of a power feeding device.

FIG. 9 A top view and a perspective view of a power feeding device.

FIG. 10 Top views of power feeding devices.

FIG. 11 Perspective views of an electronic device.

FIG. 12 Views illustrating a structure example of a neural network.

FIG. 13 A view illustrating a structure example of a semiconductordevice.

FIG. 14 A view illustrating a structure example of a memory cell.

FIG. 15 A view illustrating a structure example of an offset circuit.

FIG. 16 A timing chart.

FIG. 17 A: a functional block diagram illustrating a structure exampleof a NOSRAM. B: a circuit diagram illustrating a structure example of amemory cell.

FIG. 18 A: a circuit diagram illustrating a structure example of amemory cell array. B, C: circuit diagrams illustrating structureexamples of memory cells.

FIG. 19 A: a circuit diagram illustrating a structure example of amemory cell of a DOSRAM. B: a view illustrating an example of a stackedlayer structure of a DOSRAM.

FIG. 20 An example of an electronic device.

FIG. 21 Examples of an electronic device.

MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments will be described with reference to drawings.Note that the embodiments can be implemented with many different modes,and it will be readily appreciated by those skilled in the art thatmodes and the details of the embodiments can he changed in various wayswithout departing from the spirit and scope thereof. Thus, the presentinvention should not be interpreted as being limited to the followingdescription of the embodiments.

In the drawings, the size, the layer thickness, or the region isexaggerated for clarity in some cases. Therefore, the size, the layerthickness, or the region is not limited to the illustrated scale. Notethat the drawings schematically illustrate ideal examples, andembodiments of the present invention are not limited to shapes, values,or the like shown in the drawings.

In this specification, the embodiments described below can be combinedas appropriate. In addition, in the case where a plurality of structureexamples are described in one embodiment, the structure examples can becombined with each other as appropriate.

In this specification, a neural network refers to a general model thatis modeled on a biological neural network, determines the connectionstrength of neurons by learning, and has the capability of solvingproblems. A neural network includes an input layer, an intermediatelayer (also referred to as a hidden layer), and an output layer.

In describing a neural network in this specification, to determine aconnection strength of neurons (also referred to as a weightcoefficient) from existing information is sometimes referred to as“learning.”

Moreover, in this specification, to draw a new conclusion from a neuralnetwork formed using connection strengths obtained by learning issometimes referred to as “inference.”

In this specification and the like, a transistor including an oxidesemiconductor or a metal oxide in its channel formation region isreferred to as an Oxide Semiconductor transistor or an OS transistor.

Embodiment 1

In this embodiment, a power feeding device of one embodiment of thepresent invention will be described.

<Power Feeding Device>

FIG. 1 illustrates an example of a block diagram of each of a powerfeeding device 140 and an electronic device 120 having a function ofwirelessly communicating with the power feeding device 140. Furthermore,FIG. 2(A) illustrates an example of a top view of the power feedingdevice 140 and the electronic device 120, and FIG. 2(B) illustrates anexample of a perspective view corresponding to FIG. 2(A).

The power feeding device 140 includes a coil 185, a control circuit 186,and a memory 132. The control circuit 186 includes a neural network NN.

In the neural network NN, an OS transistor described later can be used.The use of the OS transistor allows a product-sum operation circuit tobe formed of fewer transistors as described later. Thus, the circuitscale of the neural network NN can be reduced. Furthermore, with thestructure described later, higher operation accuracy and lower powerconsumption of the neural network of one embodiment of the presentinvention can be achieved.

For example, power is supplied from an adapter 162 to the controlcircuit 186 of the power feeding device 140. The adapter 162 has afunction of converting AC power to DC power and then outputting the DCpower, for example. The adapter 162 may be referred to as an AC/DCadapter. The control circuit 186 may include a power management IC.

The electronic device 120 illustrated in FIG. 1 includes a storagebattery 135, a control circuit 182, and a coil 183. Furthermore, theelectronic device 120 preferably includes a protection circuit 137, acharge control circuit 171, a sensor element 174, a fuse 176, atransistor 147, a transistor 148, and the like. The charge controlcircuit 171 may include a coulomb counter CC. A block 161 included inthe electronic device 120 is described later.

The electronic device 120 includes a housing 139 as illustrated in FIG.2(B), and the storage battery 135, the coil 183, and the like areprovided in a space surrounded by the housing 139. The housing 139 canbe formed of a metal, for example. As the metal, aluminum, stainlesssteel, or the like can be used. Since metals might block electromagneticwaves, electric waves, or the like, at least part of the housing 139 ispreferably formed using a material having a lower blocking property thanmetals, such as glass, quartz, plastics, or a flexible resin, forexample. For example, a surface of the housing 139 which faces the powerfeeding device 140 can be formed using a material having a lowerblocking property than metals.

The electronic device 120 is provided over the power feeding device 140or in the vicinity of the power feeding device 140. The power feedingdevice 140 can charge the storage battery 135 included in the electronicdevice 120. Specifically, for example, the storage battery 135 can becharged by transmission of a wireless signal from the coil 185 includedin the power feeding device 140 to the coil 183 included in theelectronic device 120.

The power feeding device 140 may have a function of detecting theposition of the coil 183. Furthermore, the power feeding device 140 mayhave a function of moving the coil 185 to a distance where a signal canbe efficiently transmitted to the coil 183, in response to the detectedpositional information on the coil 183.

The power feeding device 140 may include a position detection circuitand a moving mechanism. Furthermore, the power feeding device 140 mayinclude a position detection coil. For example, a plurality of positiondetection coils are provided in the power feeding device 140 to causeelectromagnetic induction between the coil 183 and each of the pluralityof position detection coils. A position detection coil with a largerelectromagnetic induction force is positioned closer to the coil 183; byutilizing this, the position of the coil 183 can be detected. Forexample, as illustrated in FIG. 2(B), after the electronic device 120 isprovided over the power feeding device 140, the position of the coil 183can be detected and the coil 185 can be moved in a direction indicatedby an arrow.

The coil 185 and the coil 183 can mutually transmit and receive awireless signal. The coil 185 and the coil 183 can employ a method ofelectromagnetic induction, electric wave reception, resonance, or thelike for transmission and reception. The coil 185 and the coil 183 arereferred to as antennas, in some cases. Furthermore, the coil 185 andthe coil 183 may perform transmission and reception in conformity withan international standard such as Q_(i).

Since wireless power feeding can be used in order to feed power to theelectronic device 120, the electronic device 120 is not provided with aterminal for power feeding, in some cases. In the case where theelectronic device 120 is provided with a terminal for power feeding, thehousing 139 has an opening in the terminal portion, for example, andmoisture or dust may break into the housing 139 of the electronic device120 from the terminal portion. The entry of moisture or dust may cause amalfunction or a short circuit in various circuits such as a controlcircuit and a storage battery. The structure not provided with theterminal for power feeding may improve water resistance and dustresistance of the electronic device 120.

In the electronic device of one embodiment of the present invention, anOS transistor can be used in at least part of a memory, a neuralnetwork, a CPU, and other circuits. An OS transistor is not easilyaffected by a short-channel effect and can have a more favorable on/offratio than a silicon transistor or the like, without the need forthinning a gate insulating film. Furthermore, an OS transistor has ahigh withstand voltage between its source and drain and thus can operateat a higher voltage with ensured reliability. This can lead to a stablecircuit operation during long-distance wireless power feeding at ahigher voltage in some cases. Moreover, in some cases, an OS transistoris less likely to he affected by noise than a silicon transistor, whichallows more stable wireless power feeding. A memory including an OStransistor is described later.

The control circuit 186 and the control circuit 182 include a rectifiercircuit, a. demodulation circuit, a modulation circuit, a constantvoltage circuit, or the like, for example. Furthermore, at least one ofthe control circuit 186 and the control circuit 182 may include acurrent or voltage detection circuit, a driver circuit, ananalog-digital converter circuit, a digital-analog converter circuit, orthe like, for example.

The control circuit 182 can supply power supplied from the power feedingdevice 140 through the coil 183 to circuits incorporated in the controlcircuit 182 and each block included in the electronic device 120. forexample, the block 161. Each block included in the electronic device 120can include a variety of components. The block 161 includes one or morecomponents selected from a display portion, an imaging portion, a sensorelement, a speaker, a microphone, and the like, for example. Forexample, in the case where the electronic device 120 has a displayportion, the control circuit 182 can supply power to a driver circuit ofthe display portion. The control circuit 182 may include a powermanagement IC.

The charge control circuit 171 has a function of charging a storagebattery. Furthermore, the charge control circuit 171 has a function ofmeasuring a parameter of a storage battery. The current of the storagebattery 135 may be measured with the coulomb counter CC included in thecharge control circuit 171,

The SOC (State of Charge) of the storage battery 135 is preferablyestimated by the charge control circuit 171. The SOC is, for example, avalue representing the percentage of the storage battery capacity whenthe full charge capacity (FCC) is 100%. The SOC is referred to as aremaining capacity value or a charging rate in some cases. The FCC is,for example, the discharge capacity of a storage battery in the casewhere discharging is performed after full charging is performed. Fullcharging refers to, for example, charging a storage battery to the endunder a predetermined charge condition. The FCC is a value that variesdepending on an end-of-charge voltage (an upper charging voltage limit),an end-of-charge current, or the like.

The SOC of the storage battery 135 may be estimated by the coulombcounter CC. The SOC of the storage battery 135 may be estimated using asingle parameter or a plurality of parameters of the storage battery135.

When the parameter of the storage battery 135 matches an end-of-chargecondition, becomes higher than or equal to an end-of-charge voltage, orbecomes lower than or equal to an end-of-charge current, the chargecontrol circuit 171 can supply a signal telling an end of charge to thecontrol circuit 182.

The control circuit 182 has a function of supplying a charge conditionof the storage battery 135 to the charge control circuit 171.Furthermore, the control circuit 182 has a function of supplying aparameter of the storage battery 135 to the control circuit 186 throughthe coil 183 and the coil 185. Examples of the parameter of the storagebattery 135 are a voltage, a current, an estimated SOC, an impedance, anopen circuit voltage, an individual identification number, and the likeof the storage battery 135. Furthermore, the electronic device 120preferably includes a clock that outputs time information. In the casewhere the electronic device 120 includes a clock (a device having afunction of measuring time), the time When the parameter is obtainedlinked with the parameter of the storage battery 135 may be supplied tothe control circuit 186.

The control circuit 186 has a function of supplying the parameter of thestorage battery 135 to the neural network NN. In accordance with thesupplied parameter, the neural network NN outputs a numerical value V1.A numerical value V12 corresponding to the numerical value V1 output bythe neural network NN is supplied to the control circuit 182 from thecontrol circuit 186 through the coil 185 and the coil 183. Here, thenumerical value V1 and the numerical value V12 are each not necessarilya single numerical value but may be data being a set of severalnumerical values.

The charge condition of the storage battery 135 is determined by thecontrol circuit 186 on the basis of the supplied numerical value V12,and the determined charge condition is supplied to the charge controlcircuit 171.

In the structure illustrated in FIG. 1, the power feeding device 140includes an antenna 189, and the electronic device 120 includes anantenna 188. The antenna 188 and the antenna 189 can give and receivedata to/from a server 133. In the case where learning is performed inthe server 133, a connection strength updated by the learning can besupplied from the server 133 to the neural network NN through theantenna. 189. Alternatively, a connection strength updated by thelearning can be supplied from the server 133 to a memory included in thecontrol circuit 182 through the antenna 188, and then the connectionstrength can be supplied from the memory to the neural network NNthrough the coil 183 and the coil 185. By following the path backward,data for learning can be supplied from the neural network NN to theserver.

The memory 132 preferably includes a volatile memory and a nonvolatilememory, for example. As the volatile memory, a DRAM, an SRAM, or thelike can be used, for example. The memory 132 may function as anexternal message of a CPU included in the control circuit 186.

A memory including an OS transistor described later can be used as thememory 132. The calculation scale of the operation using a neuralnetwork sometimes becomes enormous, and an enormous amount of data istransferred to the memory or read from the memory. The use of the memoryincluding an OS transistor in an electronic device of one embodiment ofthe present invention can reduce power consumption. The reduction inpower consumption suppresses generation of heat from the electronicdevice 120. In addition, the use of the memory including an OStransistor may increase the speed of writing, reading, and the like insome cases.

As the storage battery 135, a secondary battery is preferably used, forexample. Examples of the secondary battery include a secondary batterythat utilizes an electrochemical reaction, such as a lithium ionbattery, an electrochemical capacitor such as an electric double-layercapacitor or a redox capacitor, an air battery, a fuel battery, and thelike.

As a positive electrode material of the secondary battery, a materialincluding an element A, an element X, and oxygen can be used, forexample. The element A is preferably one or more selected from the Group1 elements and the Group 2 elements. As a Group 1 element, an alkalimetal such as lithium, sodium, or potassium can be used, for example. Asa Group 2 element, calcium, beryllium, magnesium, or the like can beused, for example. As the element X, one or more selected from metalelements, silicon, and phosphorus can be used, for example. The elementX is preferably one or more selected from cobalt, nickel, manganese,iron, and vanadium.

The coulomb counter CC has a function of calculating the amount ofaccumulated charge with the use of time characteristics of the currentof the storage battery 135.

The protection circuit 137 has a function of stopping the operation ofthe storage battery when the storage battery 135 satisfies a certainpredetermined condition. For example, the operation is stopped when thecurrent of the storage battery 135 exceeds a certain value. For anotherexample, the operation is stopped when the voltage of the storagebattery becomes higher than or equal to a certain value or lower than orequal to a certain value. The protection circuit 137 can control thestorage battery 135 with the use of the current and the voltage of thestorage battery 135 that are measured by the charge control circuit 171described later, for example. When stopping the operation of the storagebattery 135, the protection circuit 137 may have a path to connect twoelectrodes (e.g., a positive electrode and a negative electrode) of thestorage battery 135 to cause a short circuit between the two electrodes.A resistor or a capacitor may be provided in the path.

The sensor element 174 preferably includes one or more of a pressuresensor, a temperature sensor, an acceleration sensor, and a strainsensor.

As the sensor element 174, a sensor having a function of detectingwhether a user is in the neighborhood by imaging or irradiation from alight source can be used. A detection result from the sensor element 174can be supplied to the neural network.

The transistor 147 and the transistor 148 function as switches thatblock current, and the switches are operated when the protection circuit137 decides to stop the storage battery 135. Although MOSFETs includingparasitic diodes are illustrated as the transistor 147 and thetransistor 148 in the example illustrated in FIG. 1, OS transistors maybe used as the transistor 147 and the transistor 148. The details of anOS transistor are described later.

The structure illustrated in FIG. 3 is different from the structureillustrated in FIG. 1 in not including the antenna 189 in the powerfeeding device 140. In the case where learning is performed in theserver 133, a connection strength updated by the learning is suppliedfrom the server 133 to the memory included in the control circuit 182through the antenna 188, and the connection strength can be suppliedfrom the memory to the neural network NN through the coil 183 and thecoil 185. By following the path backward, data for learning can besupplied from the neural network NN to the server.

The structure illustrated in FIG. 4 is different from the structureillustrated in FIG. 1 in that the control circuit 182 includes a neuralnetwork NN, that the memory 132 is electrically connected to the controlcircuit 182, and that the power feeding device 140 does not include theneural network NN, the memory 132, and the antenna 189. In the casewhere learning is performed in the server 133, the control circuit 182can supply the connection strength from the server 133 to the neuralnetwork NN through the antenna 188. By following the path backward, datafor learning can be supplied from the neural network NN to the server.Note that the power feeding device 140 in FIG. 4 may include the neuralnetwork NN, the memory 132, and the antenna 189.

<Operation Method of Power Feeding Device>

An operation of the power feeding device of one embodiment of thepresent invention is described with reference to a flowchart illustratedin FIG. 5.

Processing starts in Step 5200. Then, in Step 5201, a user provides theelectronic device 120 including the storage battery 135 for the powerfeeding device 140, specifically over the power feeding device 140 or inthe neighborhood thereof. The neighborhood herein means a distance ofshorter than 500 mm, a distance of shorter than 300 mm, or a distance ofshorter than 100 mm for provision, for example.

Next, in Step S202, the coil 183 included in the electronic device 120is detected. In the next Step S203, the coil 185 is moved. Note that themovement of the coil 185 need not be performed in some cases. Moving thecoil 185 to the neighborhood of the coil 183 allows signal transmissionand power feeding from the coil 185 to the coil 183 with high powerefficiency.

Next, in Step S204, a parameter of the storage battery 135 is obtained.The parameter of the storage battery 135 is obtained with the chargecontrol circuit 171 or the like. Next, in Step S205, the charge controlcircuit 171 estimates the SOC of the storage battery 135 on the basis ofthe obtained parameter. Note that the SOC of the storage battery 135 maybe estimated with the neural network NN. Next, in Step S206, theestimated SOC is supplied to the neural network NN.

Next, in Step S207, inference by the neural network NN is performed.Then, in Step S208, the storage battery 135 is charged on the basis ofan operation result obtained from the inference by the neural networkNN. Specifically, for example, a numerical value corresponding to theoutput from the neural network NN is supplied to the control circuit186, a charge condition is determined on the basis of the suppliednumerical value, and charging of the storage battery 135 is performedunder the determined condition.

Next, in Step S209, the user removes the electronic device 120 includingthe storage battery 135 from the power feeding device 140. Note thatcharging of the storage battery 135 is not completed in Step S209 insome cases. Lastly, the processing is finished in Step S299.

<Operation Method 2 of Power Feeding Device>

Next, an operation of the power feeding device of one embodiment of thepresent invention is described with reference to a flow illustrated inFIG. 6.

Processing starts in Step S300. Next, Step S301 to Step S303 areperformed. Step S201, Step S202, and Step S203 may be referred to forStep S301, Step S302, and Step S303, respectively.

Next, in Step S304, an identification number of the storage battery 135or an identification number of the electronic device 120 on which thestorage battery 135 is mounted, and a parameter of the storage battery135 are obtained. The identification number is obtained with a readcircuit included in the control circuit 182, for example. The parameteris obtained by the charge control circuit 171, for example. Next, inStep S305, the obtained identification number is supplied to the controlcircuit 186, and a connection strength corresponding to theidentification number is supplied from the memory 132 to the neuralnetwork NN. Then, in Step S306, the SOC of the storage battery 135 isestimated by the control circuit 182 or the like on the basis of theobtained parameter.

Next, in Step S307, the estimated SOC is stored in the memory. Here, theSOC is preferably stored in the memory in the state of being linked withthe identification number. In addition, the time when the parameter isobtained is preferably linked with the SOC and the identification numberwhen stored in the memory. The data stored here is used for an update ofa connection strength to be described later.

Next, in Step S309, inference is performed with the neural network NNwhere the connection strength has been updated. Then, in Step S310, thestorage battery 135 is charged on the basis of an operation resultobtained from the inference by the neural network NN. Specifically, forexample, a. numerical value corresponding to the output from the neuralnetwork NN is supplied to the control circuit 186, a condition isdetermined on the basis of the supplied numerical value, and charging ofthe storage battery 135 is performed under the determined condition.

Next, in Step S311, the user removes the electronic device 120 from thepower feeding device. Then, for example, after a lapse of a certaintime, the processing returns to Step S301. In Step S301, the userprovides the electronic device 120 for the power feeding device. Afterthat, processing in Step S302 to Step S311 is performed, and after alapse of a certain time, the processing returns to Step S301 again. Inother words, Step S301 to Step S311 are repeatedly performed in theflowchart illustrated in FIG. 6. In this case, every time the processingof Step S307 is performed, the SOC and the time corresponding to theidentification number are accumulated in the neural network NN. When theneural network NN make an inference with the accumulated values, theinference accuracy of the electronic device 120 can be increased.

<Operation Method 3 of Power Feeding Device

Next, an operation of the power feeding device of one embodiment of thepresent invention is described with reference to a flowchart illustratedin FIG. 7. The flowchart illustrated in FIG. 7 shows an example ofproviding a plurality of storage batteries or a plurality of electronicdevices including a storage battery for a power feeding device.

An example of providing two electronic devices 120 (an electronic device120 a and an electronic device 120 b here) for the power feeding device140 is considered in FIG. 7. A case where the electronic device 120 aincludes a storage battery 135 a and a coil 183 a and the electronicdevice 120 h includes a storage battery 135 b and a coil 183 h isconsidered. Here, the description of the electronic device 120 can bereferred to for the electronic device 120 a and the electronic device120 b. Furthermore, the description of the storage battery 135 can bereferred to for the storage battery 135 a and the storage battery 135 b.Furthermore, the description of the coil 183 can be referred to for thecoil 183 a and the coil 183 b.

Processing starts in Step S400. Next, the processing of Step S301 toStep S310 shown in FIG. 6 is performed on the electronic device 120 a inStep S401.

Next, in Step S402, the user provides the electronic device 120 b forthe power feeding device 140. An example of providing the power feedingdevice 140, the electronic device 120 a, and the electronic device 120 bin Step S402 is illustrated in a top view of FIG. 8(A) and a perspectiveview of FIG. 8(B). Then, the processing of Step S302 to Step S309 shownin FIG. 6 is performed in Step S403.

Next, in Step S404, an operation result of the neural network NN for thestorage battery 135 a and an operation result of the neural network NNfor the storage battery 135 b are compared. The comparison of theoperation results is described later.

In Step S405, whether charging of the storage battery 135 a is continuedis decided on the basis of a comparison result in Step S404; thus, theprocessing step to be performed next is selected. In the case wherecharging of the storage battery 135 a is continued (Yes), the processinggoes to Step 5406. In the case where charging of the storage battery 135a is not continued (No), that is, charging is stopped, the processingproceeds to Step S411.

In the case where the processing proceeds to Step S406, charging of thestorage battery 135 a is completed in Step S406, and then the processingproceeds to Step S407. In some cases, in Step S406, the user may removethe electronic device 120 a from the power feeding device 140 beforecharging of the storage battery 135 a is completed; the processingproceeds to Step S407 also in that case. Next, in Step S407, charging ofthe storage battery 135 b starts under a charge condition correspondingto the operation result of the neural network NN. Then in Step S408, theelectronic device 120 b is removed from the power feeding device 140.Lastly, the processing is finished in Step S459.

In the case where the processing proceeds to Step S411, the coil 185 ismoved to the neighborhood of the coil 183 b in Step S411. Then in StepS412, the storage battery 135 b is charged under a charge conditioncorresponding to the operation result of the neural network NN. Next, inStep S413, charging of the storage battery 135 b is completed, and theprocessing proceeds to Step S414. Here, if the electronic device 120 bis removed from the power feeding device 140 before Step S413, theprocessing proceeds to Step S414. Next, in Step 5414, charging of thestorage battery 135 a, which has been stopped, is restarted. Next, inStep S415, the electronic device 120 a is removed from the power feedingdevice 140. Lastly, the processing is finished in Step S499.

<Update of Connection Strength>

An example of updating a connection strength (weight) of a neuralnetwork is described.

First, a user of the electronic device 120 can link data such as thebattery charge frequency, the charge start time, and the SOC at the timewhen charging is started with the time and accumulate the data in thepower feeding device 140. The power feeding device 140 can extract afeature value with the use of the accumulated data. For the featurevalue extraction, a neural network may be used, or grouping based onnumerical value ranges determined in advance may be performed, forexample. The connection strength corresponding to the extracted featurevalue is selected from the server and supplied to the neural network NN.The power feeding device 140 determines a charge condition on the basisof a result obtained by calculation by the neural network NN with thesupplied connection strength.

The update of the connection strength may be performed in Step S207 ofFIG. 5, Step S305 or Step S307 of FIG. 6, or the like describedpreviously. Alternatively, the connection strength may be updated whenthe steps described with FIG. 5 to FIG. 7 are not executed so as to beaccumulated in the memory.

In the case of charging a plurality of storage batteries with the powerfeeding device 140, the obtained data is linked with the identificationnumber of the corresponding storage battery and registered. In the caseof charging a plurality of storage batteries, the priority of chargingas well as a charge condition is determined by the neural network NN.

The power feeding device 140 can concurrently charge a plurality ofstorage batteries, in some cases. For example, two or more storagebatteries can be charged concurrently, in some cases. In such a case,the coil 185 in the power feeding device 140 can be moved so that thedistance between the coil 183 corresponding to the storage battery whichis decided to have higher priority and the coil 185 included in thepower feeding device 140 can be shorter than the distance between thecoil 183 corresponding to another storage battery and the coil 185. Inthe case where a magnetic field, an electric field, or the likegenerated by the coil 185 has anisotropy, the coil 185 can be rotated,or rotated and moved so that the coil 183 corresponding to the storagebattery which is decided to have higher priority can receive a highermagnetic field or electric field than the coil 183 corresponding toanother storage battery.

When the SOC of the storage battery 135 keeps in a high state, e.g., afull charge stage for a long time, deterioration of the storage battery135 is accelerated in sonic cases. The deterioration of the storagebattery 135 means a reduction in full charge capacity over time, forexample. Here, the usage tendency of the electronic device 120 can bejudged from the charge frequency, the charge start time, the SOC at thetime when charging is started, and the like, which are linked with thestorage battery 135 included in the electronic device 120 andaccumulated, with the neural network NN. For example, in the case wherethe SOC at the time when charging is started tends to be sufficientlyhigh in the electronic device 120, that is, in the case where a statewhere the SOC at the time of charging is for example 30% or higher, or40% or higher occurs frequently, the neural network NN recommends thatan end-of-charge condition of the storage battery 135 is set to acapacity lower than the full charge capacity, e.g., a capacity that ishigher than 70 and lower than 90 of the full charge; thus, deteriorationof the storage battery can be slowed down. The recommended end-of-chargecondition is preferably shown in a display portion, an indicator, or thelike included in the power feeding device 140 or the electronic device120, for example. As the indicator, a lamp or the like can be used. Theuser can confirm the recommended condition, and a signal showing whetherto consent to the condition can be supplied from the display portion oran input portion (e.g., a button) of the power feeding device 140 or theelectronic device 120, to the power feeding device 140.

Furthermore, suppressing a charge rate can suppress deterioration of thestorage battery 135, in some cases. A low charge rate can be recommendedfor the electronic device 120 which tends to have a sufficiently highSOC at the time When charging is started or the electronic device 120whose charge frequency is low

Next, the order in the case of charging a plurality of storage batteriesis described. A case where the storage battery 135 having a lower SOC ischarged first in the case of charging a plurality of storage batteriesin order is considered in other words, charging is performed in orderfrom the storage battery 135 which needs a larger charge amount.Charging in this order can narrow down the difference of chargecompletion time between the storage batteries.

The power feeding device of one embodiment of the present invention cannarrow down the difference of charge completion time between a pluralityof charged storage batteries.

In contrast, in the case where a user prefers that charging theelectronic device 120 including the storage battery 135 with a higherSOC be completed in the shortest possible time, the user can supply asignal showing that the user does not consent to the conditionrecommended by the neural network NN to the power feeding device 140with the display portion or the input portion (e.g., the button) of thepower feeding device 140 or the electronic device 120.

With the use of the signal supplied from the display portion or theinput portion, the neural network NN extracts a feature value, and theconnection strength corresponding to the extracted feature value isselected from the server and supplied to the neural network NN. Updatingthe connection strength of the neural network NN in this manner, acharge condition that meets the user's preference or priority can beproposed, and furthermore deterioration of the storage battery can besuppressed.

FIG. 9 illustrates an example in which the power feeding device 140includes a motor 141 and the coil 185 is provided over the motor 141.FIG. 9(A) is a top view of the power feeding device 140, and FIG. 9(B)is a perspective view of the power feeding device 140. The motor 141 isa dual axis motor and includes a motor 141 a corresponding to the firstaxis and a motor 141 b corresponding to the second axis. The motor 141 amoves in a lateral direction shown in FIG. 9(A), and the coil 185 overthe motor 141 a moves in a vertical direction shown in FIG. 9(A). As themotor 141, a rotating motor, a linear motor utilizing levitation bymagnetic force, or the like can be used, for example. Instead of beingprovided over the motor, the coil 185 may be provided over a dual axisrobotic arm.

The power feeding device 140 illustrated in FIG. 9 includes a chip group190. The chip group 190 is a set of chips forming the control circuit186 or the memory 132.

FIG. 9(C) is an enlarged view of the chip group 190, The chip group 190includes an IC 191, an IC 192, an IC 193, and the like forming thecontrol circuit 186; a memory 194, a memory 195, and the like formingthe memory 132; and an antenna 196, for example.

For example, an IC including a CPU, a GPU, a neural network, or the likecan be used as the IC 191. Furthermore, an IC having a function ofcontrolling wireless power feeding through the coil 185 can be used asthe IC 192, and the IC 192 includes a rectifier circuit, a demodulationcircuit, a modulation circuit, a constant voltage circuit, or the like,for example. As the IC 193, a communication module described later canbe used. The IC 193 has a function of performing communication via theantenna 196. The IC 193 can perform communication across a distance of 5meters or more, 50 meters or more, or 500 meters or more, for example.

For example, a DOSRAM described later and a NOSRAM described later canbe used as the memory 194 and the memory 195. respectively. Furthermore,a NOSRAM described later may be used as a memory included in the CPU,the GPU, or the like.

FIG. 10 illustrates an example in which the power feeding device 140includes a plurality of position detection coils 187, Each of theplurality of position detection coils 187 is electrically connected to aposition detection circuit. The position detection circuit has afunction of measuring a current flowing through each coil. The powerfeeding device 140 illustrated in FIG. 10(A) includes nine positiondetection coils 187 which are provided in three columns and three rows.Furthermore, in the power feeding device 140 illustrated in FIG. 10(B),vertically oriented position detection coils 187 a are provided in sixcolumns and horizontally oriented position detection coils 187 b arearranged in four rows.

This embodiment can be combined with the description of the otherembodiments as appropriate.

Embodiment 2

In this embodiment, an example of the electronic device 120 described inthe above embodiment is described.

FIG. 11 illustrates a tablet information terminal 6200 as an example ofan electronic device of one embodiment of the present invention. Theinformation terminal 6200 includes a housing 6221 a, a housing 6221 b, ahousing 6221 c, a display portion 6222, an operation button 6223 a, anoperation button 6223 b, a speaker 6224, a camera 6226, and a touchsensor. FIG. 11(A) is a perspective view of the information terminal6200 seen from a surface having the display portion 6222, and FIG. 11(B)is a perspective view seen from a rear surface of the surfaceillustrated in FIG, 11(A).

The information terminal 6200 includes a storage battery 6228, a coil6229, an IC 6231, an IC 6232, an IC 6233, a memory 6234, a memory 6235,an antenna 6236, and the like inside the housing composed of the housing6221 a, the housing 6221 b, and the housing 6221 c. For the storagebattery 6228, the description of the storage battery 135 can be referredto. For the coil 6229, the description of the coil 183 can be referredto. For the antenna 6236, the antenna 188 can be referred to.

For example, the IC 6231 to the IC 6233 are ICs included in the controlcircuit 182 described in the above embodiment. As the IC 6231, an ICincluding a CPU, a GPU, a neural network, or the like can be used, forexample. Furthermore, as the IC 6232, an IC having a function ofwirelessly feeding power via the coil 6229 can be used. The IC 6232includes a rectifier circuit, a demodulation circuit, a modulationcircuit, a constant voltage circuit, or the like, for example.Furthermore, as the IC 6233, a communication module described later canbe used. The IC 6233 has a function of performing communication via theantenna 6236. The IC 6233 can perform communication across a distance of5 meters or more, 50 meters or more, or 500 meters or more, for example.

For the memory 6234 and the memory 6235, the description of the memory132 described in the embodiment can be referred to. For example, aDOSRAM described later and a NOSRAM described later can be used as thememory 6234 and the memory 6235, respectively, Furthermore, a NOSRAMdescribed later may be used as a memory included in the CPU, the GPU, orthe like.

The communication module can perform communication via an antenna. Forexample, the communication module controls a control signal forconnecting an electronic device to a computer network in response toinstructions from an arithmetic portion such as a CPU and transmits thesignal to the computer network. Accordingly, communication can beperformed by connection of the electronic device to a computer networksuch as the Internet, which is an infrastructure of the World Wide Web(WWW), an intranet, an extranet, a PAN (Personal Area Network), a LAN(Local Area Network), a CAN (Campus Area Network), a MAN (MetropolitanArea Network), a WAN (Wide Area Network), or a GAN (Global AreaNetwork). In the case where a plurality of communication methods areused, a plurality of antennas for the communication methods may beincluded.

The communication module is provided with a high frequency circuit (RFcircuit), for example, to transmit and receive an RF signal. The highfrequency circuit is a circuit for performing mutual conversion betweenan electromagnetic signal and an electric signal in a frequency bandthat is set by national laws to perform wireless communication withanother communication apparatus using the electromagnetic signal. As apractical frequency band, several tens of kilohertz to several tens ofgigahertz are generally used. A structure can be employed in which thehigh frequency circuit connected to an antenna includes a high frequencycircuit portion compatible with a plurality of frequency bands and. thehigh frequency circuit portion includes an amplifier, a mixer, a filter,a DSP, an RF transceiver, or the like. In the case of performingwireless communication, it is possible to use, as a communicationprotocol or a communication technology, a communication standard such asLTE (Long Term Evolution), GSM (Global System for Mobile Communication:registered trademark), EDGE (Enhanced Data. Rates for GSM Evolution),CDMA 2000 (Code Division Multiple Access 2000), or WCDMA (Wideband CodeDivision Multiple Access: registered trademark), or a communicationstandard developed by IEEE such as Wi-Fi (registered trademark).Bluetooth (registered trademark), or ZigBee (registered trademark),

The communication module may have a function of connecting theelectronic device to a telephone line. In the case of making a phonecall through a telephone line, the communication module controls aconnection signal for connecting the electronic device to the telephoneline in response to an instruction from the arithmetic portion such as aCPU and transmits the signal to the telephone line. To transfer orreceive data at higher speed, the communication module sometimes needsmore power. Even in such a case, the electronic device of one embodimentof the present invention can reduce power consumption by using an OStransistor in a neural network, a memory, or the like included in thecontrol circuit. Since the power consumption of the whole electronicdevice can be suppressed, in some cases, the duration of the storagebattery can be long even when high-speed data transfer or reception isperformed.

The housing 6221 a, the housing 6221 b, and the housing 6221 c may beformed of different materials. Alternatively, they may include the samematerial. Furthermore, two or more of the housing 6221 a, the housing6221 b, and the housing 6221 c may have a continuous structure.

As the housing 6221 a, the housing 6221 b, and the housing 6221 c, ametal can be used, for example. As the metal, aluminum, stainless steel,or the like can be used. Moreover, since metals might blockelectromagnetic waves, electric waves, or the like, at least one of thehousing 6221 a, the housing 6221 b, and the housing 6221 c is preferablyformed using a material having a lower blocking property than metals,such as glass, quartz, plastics, or a flexible resin, for example.

For example, the housing 6221 a is preferably formed using a materialhaving a lower blocking property than metals. Furthermore, the housing6221 c positioned over the display portion 6222 can be formed using amaterial having a high transmittance, such as glass, quartz, plastics,or a resin, for example.

As illustrated in FIG. 11(A), the information terminal 6200 preferablyhas a structure including the camera 6226. Furthermore, although notillustrated, the information terminal 6200 may he provided with aninfrared irradiation device. Moreover, although not illustrated, theinformation terminal 6200 may have a structure including a sensor fordetecting a line of sight. The sensor for detecting a line of sightcaptures an image of an eye and the periphery thereof with an imagingdevice included in the electronic device 120 and detects data of theiris, the pupil, the outline of the eye, or the like from the capturedimage with a detection device, for example. With the structure held bythe sensor for detecting a line of sight, biometric identification maybe performed. The camera 6226 included in the information terminal 6200has a lens used for imaging on its rear surface, for example. As shownby the example in FIG. 11(A) and. FIG. 11(B), the information terminal6200 includes an operation button 6223 c positioned on a side surfacethat is opposite to the side surface where the operation button 6223 bis provided.

Furthermore, the information terminal 6200 illustrated in FIG. 11(A) mayhave a structure including a device that obtains biological data offingerprints, veins, iris, pupil, voice prints, or the like. Employingthis structure allows the information terminal 6200 to have a biometricidentification function.

The information terminal 6200 illustrated in FIG. 11(A) may have astructure including a light-emitting device for use as a flashlight or alighting device.

In FIG. 11(A), the operation button 6223 a, the speaker 6224, and thecamera 6226 are provided so as to be embedded in a bezel of the housing6221 c.

Furthermore, the information terminal 6200 may include an opticalsensor. The optical sensor can measure the illuminance of externallight. In addition, the optical sensor may measure the incident angle ofexternal light.

A function of a position input device may be added to the informationterminal 6200 of one embodiment of the present invention. The functionof the position input device can be added by provision of a touch panelin a display portion. Alternatively, the function of the position inputdevice can be added by provision of a photoelectric conversion elementcalled a photosensor in a pixel portion of a display device. As theoperation button 6223 a and the operation button 6223 b, any of a powerswitch for starting the information terminal 6200, a button foroperating an application of the information terminal 6200, a volumecontrol button, a switch for turning on or off the display portion 6222,and the like can be provided. Although an example in which the number ofoperation buttons in the information terminal 6200 is four (the numberof 6223 a: 1. the number of 6223 b: 2, the number of 6223 c: 1, a totalof 4) is illustrated in FIG. 11(A) and FIG. 11(B), the number andposition of operation buttons in the information terminal 6200 are notlimited to this.

Although not illustrated, the information terminal 6200 illustrated inFIG. 11(A) may have a structure provided with a sensor (a sensor havinga function of measuring force, displacement, position, speed,acceleration, angular velocity, rotational frequency, distance, light,liquid, magnetism, temperature, a chemical substance, sound, time,hardness, electric field, current, voltage, electric power, radiation,flow rate, humidity, gradient, oscillation, a smell, infrared rays, orthe like) inside the housing composed of the housing 6221 a, the housing6221 b, and the housing 6221 c. In particular, when a measuring deviceincluding a sensor such as a gyroscope sensor or an acceleration sensorfor measuring inclination is provided, display on the screen of thedisplay portion 6222 can be automatically changed in accordance with theorientation of the information terminal 6200 by determining theorientation of the information terminal 6200 (the orientation of theinformation terminal with respect to the vertical direction).

Furthermore, although not illustrated, the information terminal 6200illustrated in FIG. 11(A) may have a structure including a microphone.When the information terminal 6200 has a structure including amicrophone and the speaker 6224, a telephone call function as in amobile phone can be offered to the information terminal 6200, forexample. In some cases, the information terminal 6200 can have a speechinterpretation function. With the speech interpretation function, theinformation terminal 6200 can have a function of operating theinformation terminal 6200 by speech recognition, a function ofinterpreting a speech or a conversation and creating a summary of thespeech or the conversation, and the like. This can be utilized to createmeeting minutes or the like, for example.

This embodiment can he implemented in combination with the otherembodiments as appropriate.

Embodiment 3

In this embodiment, a structure example of a semiconductor device thatcan he used in the neural network described in the above embodiment isdescribed.

As shown in FIG. 12(A), the neural network NN can be formed of an inputlayer IL, an output layer OL, and a middle layer (hidden layer) HL. Theinput layer IL, the output layer OL, and the middle layer HL eachinclude one or more neurons (units). Note that the middle layer HL maybe composed of one layer or two or more layers. A neural networkincluding two or more middle layers EEL can also be referred to as a ANN(deep neural network), and learning using a deep neural network can alsobe referred to as deep learning.

Input data is input to neurons of the input layer IL, output signals ofneurons in the previous layer or the subsequent layer are input toneurons of the middle layer HL, and output signals of neurons in theprevious layer are input to neurons of the output layer OL. Note thateach neuron may be connected to all the neurons in the previous andsubsequent layers (full connection), or may be connected to some of theneurons.

FIG. 12(B) shows an example of an operation with the neurons. Here, aneuron N and two neurons in the previous layer that output signals tothe neuron N are shown. An output x₁ of the neuron in the previous layerand an output x₂ of the neuron in the previous layer are input to theneuron N. Then, in the neuron N, a total sum x₁w₁+x₂w₂ of the product ofthe output x₁ and a weight w₁ (x₁w₁) and the product of the output x₂and a weight w₂ (x₂w₂) is calculated, and then a bias b is added asnecessary, so that a value a=x₁w₁+x₂w₂+b is obtained. Then, the value ais converted with an activation function h, and an output signal y=h(a)is output from the neuron N.

In this manner, the operation with the neurons includes the operationthat sums the products of the outputs and the weights of the neurons inthe previous layer, that is, the product-sum operation (x₁w₁+x₂w₂described above). This product-sum operation may be performed using aprogram on software or using hardware. In the case where the product-sumoperation is performed using hardware, a product-sum operation circuitcan be used. Either a digital circuit or an analog circuit may be usedas this product-sum operation circuit. When an analog circuit is used asthe product-sum operation circuit, the circuit scale of the product-sumoperation circuit can be reduced, or higher processing speed and lowerpower consumption can be achieved owing to reduced frequency of accessto a memory.

The product-sum operation circuit may be formed using a transistorincluding silicon (such as single crystal silicon) in a channelformation region (hereinafter, also referred to as a Si transistor) ormay be formed using a transistor including an oxide semiconductor in achannel formation region (hereinafter, also referred to as an OStransistor). An OS transistor is particularly suitable as a transistorincluded in a memory of the product-sum operation circuit because of itsextremely low off-state current. Note that the product-sum operationcircuit may be formed using both a Si transistor and an OS transistor. Astructure example of a semiconductor device having a function of theproduct-sum operation circuit is described below.

<Structure Example of Semiconductor Device>

FIG. 13 shows a structure example of a semiconductor device MAC having afunction of performing an operation of a neural network. Thesemiconductor device MAC has a function of performing a product-sumoperation of first data corresponding to the connection strength betweenthe neurons (weight) and second data corresponding to input data. Notethat the first data and the second data can each be analog data ormultilevel digital data (discrete data). The semiconductor device MACalso has a function of converting data obtained by the product-sumoperation with an activation function.

The semiconductor device MAC includes a cell array CA, a current sourcecircuit CS, a current mirror circuit CM, a circuit WDD, a circuit WLD, acircuit CLD, an offset circuit OFST, and an activation function circuitACTV.

The cell array CA includes a plurality of memory cells MC and aplurality of memory cells MCref. In the structure example shown in FIG.13, the cell array CA includes the memory cells MC (MC[1, 1] to MC[m,n]) in in rows and n columns (in and n are integers greater than orequal to 1) and the in memory cells MCref (MCref[1] to MCref[m]). Thememory cells MC have a function of storing the first data. In addition,the memory cells MCref have a function of storing reference data usedfor the product-sum operation. Note that the reference data can beanalog data or multilevel digital data.

The memory cell MC[i, j] (i is an integer greater than or equal to 1 andless than or equal to m, and j is an integer greater than or equal to 1and less than or equal to n) is connected to a wiring WL[i], a wiringRW[i], a wiring WD[j], and a wiring BL[j]. In addition, the memory cellMCref[i] is connected to the wiring WL[i], the wiring RW[i], a wiringWDref, and a wiring BLref. Here, a current flowing between the memorycell MC[i,j] and the wiring BL[j] is denoted by I_(MC[i, J)], and acurrent flowing between the memory cell MCref[i] and the wiring BLref isdenoted by I_(MCref[i]).

FIG. 14 shows a specific structure example of the memory cells MC andthe memory cells MCref. Although the memory cells MC[1, 1] and MC[2, 1]and the memory cells MCref[1] and MCref[2] are shown as typical examplesin FIG. 14, similar structures can be used for other memory cells MC andmemory cells MCref. The memory cells MC and the memory cells MCref eachinclude transistors Tr11 and Tr12 and a capacitor C11. Here, the casewhere the transistor Tr11 and the transistor Tr12 are n-channeltransistors is described.

In the memory cell MC, a gate of the transistor Tr11 is connected to thewiring WL, one of a source and a drain is connected to a gate of thetransistor Tr12 and a first electrode of the capacitor C11, and theother of the source and the drain is connected to the wiring WD. One ofa source and a drain of the transistor Tr12 is connected to the wiringBL, and the other of the source and the drain is connected to a wiringVR. A second electrode of the capacitor C11 is connected to the wiringRW. The wiring VR is a wiring having a function of supplying apredetermined potential. Here, the case where a low power supplypotential a ground potential) is supplied from the wiring VR isdescribed as an example.

A node connected to the one of the source and the drain of thetransistor Tr11, the gate of the transistor Tr12, and the firstelectrode of the capacitor C11 is referred to as a node NM. The nodes NMin the memory cells MC[1, 1] and MC[2, 1] are referred to as nodes NM[1,1] and NM[2, 1], respectively.

The memory cells MCref have a structure similar to that of the memorycell MC. However, the memory cells MCref are connected to the wiringWDref instead of the wiring WD and connected to the wiring BLref insteadof the wiring BL. Nodes in the memory cells MCref[1] and MCref[2] eachof which is connected to the one of the source and the drain of thetransistor Tr11, the gate of the transistor Tr12, and the firstelectrode of the capacitor C11 are referred to as nodes NMref[1] andNMref[2], respectively.

The node NM and the node NMref function as retention nodes of the memorycell MC and the memory cell MCref, respectively, The first data isretained in the node NM and the reference data is retained in the nodeNMref. Currents I_(MC[1, 1]) and I_(MC[2, 1]) from the wiring BL[1] flowto the transistors Tr12 of the memory cells MC[1, 1] and MC[2, 1],respectively. Currents I_(MCref[1]) and I_(MCref[2]) from the wiringBLref flow to the transistors Tr12 of the memory cells MCref[1] andMCref[2], respectively.

Since the transistor Tr11 has a function of retaining a. potential ofthe node NM or the node NMref, the off-state current of the transistorTr11 is preferably low. Thus, it is preferable to use an OS transistor,which has an extremely low off-state current, as the transistor Tr11.This can suppress a change in the potential of the node NM or the nodeNMref, so that the operation accuracy can be increased. Furthermore,operations of refreshing the potential of the node NM or the node NMrefcan be performed less frequently, which leads to a reduction in powerconsumption.

There is no particular limitation on the transistor Tr12, and forexample, a Si transistor, an OS transistor, or the like can be used. Inthe case where an OS transistor is used as the transistor Tr12, thetransistor Tr12 can be manufactured with the same manufacturingapparatus as the transistor T11, and accordingly manufacturing cost canbe reduced. Note that the transistor Tr12 may be an n-channel transistoror a p-Channel transistor.

The current source circuit CS is connected to the wirings BL[1] to BL[n]and the wiring BLref. The current source circuit CS has a function ofsupplying currents to the wirings BL[1] to BL[n] and the wiring BLref.Note that the value of the current supplied to the wirings BL[1] toBL[n] may be different from the value of the current supplied to thewiring BLref. Here, the current supplied from the current source circuitCS to the wirings BL[1] to BL[n] is denoted by I_(C), and the currentsupplied from the current source circuit CS to the wiring BLref isdenoted by I_(Cref).

The current mirror circuit CM includes wirings IL[1] to IL[n] and awiring ILref. The wirings IL[1] to IL[n] are connected to the wiringsBL[1] to BL[n], respectively, and the wiring ILref is connected to thewiring BLref. Here, portions where the wirings IL[1] to IL[n] areconnected to the respective wirings BL[1] to BL[n] are referred to asnodes NP[1] to NP[n]. Furthermore, a portion where the wiring ILref isconnected to the wiring BLref is referred to as a node NPref.

The current mirror circuit CM has a function of making a current I_(CM)corresponding to the potential of the node NPref flow to the wiringILref and a function of making this current I_(CM) flow also to thewirings IL[1] to IL[n]. In the example shown in FIG. 13, the currentI_(CM) is discharged from the wiring BLref to the wiring ILref, and thecurrent I_(CM) is discharged from the wirings BL[1] to BL[n] to thewirings IL[1] to IL[n]. Furthermore, currents flowing from the currentmirror circuit CM to the cell array CA through the wirings BL[l] toBL[n] are denoted by I_(B[1]) to I_(B)[n]. Furthermore, a currentflowing from the current mirror circuit CM to the cell array CA throughthe wiring BLref is denoted by I_(Bref).

The circuit WDD is connected to wirings WD[1] to WD[n] and the wiringWDref. The circuit WDD has a function of supplying a potentialcorresponding to the first data stored in the memory cells MC to thewirings WD[1] to WD[n]. The circuit WDD also has a function of supplyinga potential corresponding to the reference data stored in the memorycells MCref to the wiring WDref The circuit WLD is connected to wiringsWL[1] to WL[m]. The circuit WLD has a function of supplying a signal forselecting the memory cell MC or the memory cell MCref to which data isto be written, to any of the wirings WL[1] to WL[m]. The circuit CLD isconnected to wirings RW[1] to RW[m]. The circuit CLD has a function ofsupplying a potential corresponding to the second data to the wiringsRW[1] to RW[m].

The offset circuit OFST is connected to the wirings BL[1] to BL[n] andwirings OL[1] to OL[n]. The offset circuit OFST has a function ofdetecting the amount of current flowing from the wirings BL[1] to BL[n]to the offset circuit OFST and/or the amount of change in the currentflowing from the wirings BL[1] to BL[n] to the offset circuit OFST. Theoffset circuit OFST also has a function of outputting detection resultsto the wirings OL[1] to OL[n]. Note that the offset circuit OFST mayoutput currents corresponding to the detection results to the wiringsOL, or may convert the currents corresponding to the detection resultsinto voltages to output the voltages to the wirings OL. The currentsflowing between the cell array CA and the offset circuit OFST aredenoted by I_(α)[1] to I_(α)[n].

FIG. 15 shows a structure example of the offset circuit OFST. The offsetcircuit OFST shown in FIG. 15 includes circuits OC[1] to OC[n]. Thecircuits OC[1] to OC[n] each include a transistor Tr21, a transistorTr22, a transistor Tr23, a capacitor C21, and a resistor R1. Connectionrelationships of the elements are shown in FIG. 15. Note that a nodeconnected to a first electrode of the capacitor C21 and a first terminalof the resistor R1 is referred to as a node Na. In addition, a nodeconnected to a second electrode of the capacitor C21, one of a sourceand a drain of the transistor Tr21, and a gate of the transistor Tr22 isreferred to as a node Nb.

A wiring VrefL has a function of supplying a potential Vref, a wiringVaL has a function of supplying a potential Va, and a wiring VbL has afunction of supplying a potential Vb. Furthermore, a wiring VDDL has afunction of supplying a potential VDD, and a wiring VSSL has a functionof supplying a potential VSS. Here, the case where the potential VDD isa high power source potential and the potential VSS is a low powersource potential is described. A wiring RST has a function of supplyinga potential for controlling the conduction state of the transistor Tr21.The transistor Tr22, the transistor Tr23, the wiring VDDL, the wiringVSSL, and the wiring VbL, form a source follower circuit.

Next, an operation example of the circuits OC[1] to OC[n] is described.Note that although an operation example of the circuit OC[1] isdescribed here as a typical example, the circuits OC[2] to OC[n] canoperate in a similar manner. First, when a first current flows to thewiring BL[1], the potential of the node Na becomes a potentialcorresponding to the first current and the resistance value of theresistor R1. At this time, the transistor Tr21 is in an on state, andthus the potential Va is supplied to the node Nb. Then, the transistorTr21 is brought into an off state.

Next, when a second current flows to the wiring BL[1], the potential ofthe node Na changes to a potential corresponding to the second currentand the resistance value of the resistor R1. At this time, since thetransistor Tr21 is in an off state and the node Nb is in a floatingstate, the potential of the node Nb changes because of capacitivecoupling, following the change in the potential of the node Na. Here,when the amount of change in the potential of the node Na is ΔN_(Na) andthe capacitive coupling coefficient is 1, the potential of the node Nbis Va+ΔV_(Na). When the threshold voltage of the transistor Tr22 isV_(th), a potential Va+ΔV_(Na)−V_(th) is output from the wiring OL[1].Here, when Va=V_(th), a potential ΔV_(Na) can be output from the wiringOL[1].

The potential ΔV_(Na) is determined by the amount of change from thefirst current to the second current, the resistance value of theresistor R1, and the potential Vref. Here, since the resistance value ofthe resistor R1 and the potential Vref are known, the amount of changein the current flowing to the wiring BL can be found from the potentialΔV_(Na).

A signal corresponding to the amount of current and/or the amount ofchange in the current detected by the offset circuit OFST as describedabove is input to the activation function circuit ACTV through thewirings OL[1] to OL[n].

The activation function circuit ACTV is connected to the wirings OL[1]to OL[n] and wirings NIL[1] to NIL[n]. The activation function circuitACTV has a function of performing an operation for converting the signalinput from the offset circuit OFST in accordance with a predefinedactivation function. As the activation function, a sigmoid function, atank function, a softmax function, a ReLU function, a thresholdfunction, or the like can be used, for example. The signal converted bythe activation function circuit ACTV is output as output data to thewirings NIL[1] to NIL[n].

<Operation Example of Semiconductor Device>

The product-sum operation of the first data and the second data can beperformed with the above semiconductor device MAC. An operation exampleof the semiconductor device MAC at the time of performing theproduct-sum operation is described below.

FIG. 16 shows a timing chart of the operation example of thesemiconductor device MAC. FIG. 16 shows changes in the potentials of thewiring WL[1], the wiring W[2] the wiring WD[1], the wiring WDref thenode NM[1, 1], the node NM[2, 1], the node NMref[1], the node NMref[2],and the wiring RW[1], and the wiring RW[2] in FIG. 14 and changes in thevalues of the current I_(B)[1]-I_(α)[1] and the current I_(Bref). Thecurrent I_(B[1])-I_(α)[1] corresponds to a total of the currents flowingfrom the wiring BL[1] to the memory cells MC[1, 1] and MC[2, 1].

Although an operation is described with a focus on the memory cellsMC[1, 1] and MC[2, 1] and the memory cells MCref[1] and MCref[2] shownin FIG. 14 as a typical example, the other memory cells MC and the othermemory cells MCref can also be operated in a similar manner.

[Storage of First Data]

First, from Time T01 to Time T02, the potential of the wiring WL[1]becomes a high level (High), the potential of the wiring WD[1] becomes apotential greater than a ground potential (GND) by V_(PR)−V_(W[1, 1]),and the potential of the wiring WDref becomes a potential greater thanthe ground potential by V_(PR). The potentials of the wiring RW[1] andthe wiring RW[2] become reference potentials (REFP). Note that thepotential V_(W[1, 1]) 0 is the potential corresponding to the first datastored in the memory cell MC[1, 1]. The potential V_(PR) is thepotential corresponding to the reference data. Thus, the transistorsTr11 included in the memory cell MC[1, 1] and the memory cell MCref[1]are turned on, and the potential of the node NM[1, 1] and the potentialof the node NMref[1] become V_(PR)−V_(PR), and V_(PR), respectively.

In this case, a current I_(MC[1, 1],0) flowing from the wiring BL[1] tothe transistor Tr12 in the memory cell MC[1, 1] can be expressed by theformula shown below. Here, k is a constant determined by the channellength, the channel width, the mobility, the capacitance of a gateinsulating film, and the like of the transistor Tr12. Furthermore,V_(th) is the threshold voltage of the transistor Tr12.

I _(MC[1, 1], 0) =k(V _(PR) −V _(W[1, 1]) −V _(th))²   (E1)

Furthermore, a current I_(MCref[1], 0) flowing from the wiring BLref tothe transistor Tr12 in the memory cell MCref[1] can be expressed by theformula shown below.

I _(MCref[1], 0) =k(V _(PR) −V _(th))²   (E2)

Next, from Time T02 to Time T03, the potential of the wiring WL[1]becomes a low level (Low). Consequently, the transistors Tr11 includedin the memory cell MC[1, 1] and the memory cell MCref[1] are turned off,and the potentials of the node NM[1, 1] and the node NMref[1] areretained.

As described above, an OS transistor is preferably used as thetransistor Tr11. This can suppress the leakage current of the transistorTr11, so that the potentials of the node NM[2, 1] and the node NMref[2]can be accurately retained.

Next, from Time T03 to Time T04, the potential of the wiring WL[2]becomes the high level, the potential of the wiring WD[1] becomes apotential greater than the ground potential by V_(PR)−V_(w[2, 1]), andthe potential of the wiring WDref becomes a potential greater than theground potential by V_(PR). Note that the potential V_(W[2, 1]) is apotential corresponding to the first data stored in the memory cellMC[2, 1]. Thus, the transistors Tr11 included in the memory cell MC[2,1] and the memory cell MCref[2] are turned on, and the potentials of thenode NM[2, 1] and the node NMref[2] become V_(PR)−V_(w[2, 1]) andV_(PR), respectively.

Here, a current I_(MC[2, 1], 0) flowing from the wiring BL[1] to thetransistor Tr12 in the memory cell MC[2, 1] can be expressed by theformula shown below.

I _(MC[2, 1], 0) =k(V _(PR) −V _(W[2, 1]) −V _(th))²   (E3)

Furthermore, a current I_(MCref[2], 0) flowing from the wiring BLref tothe transistor Tr12 in the memory cell MCref[2] can be expressed by theformula shown below

I _(MCref[2], 0) =k(V _(PR) −V _(th))²   (E4)

Next, from Time T04 to Time T05, the potential of the wiring WL[2]becomes the low level. Consequently, the transistors Tr11 included inthe memory cell MC[2, 1] and the memory cell MCref[2] are turned off,and the potentials of the node NM[2, 1] and the node NMref[2] areretained.

Through the above operation, the first data is stored in the memorycells MC[1] and MC[2, 1], and the reference data is stored in the memorycells MCref[1] and MCref[2].

Here, currents flowing through the wiring BL[1] and the wiring BLreffrom Time T04 to Time T05 are considered. A current is supplied from thecurrent source circuit CS to the wiring BLref. The current flowingthrough the wiring BLref is discharged to the current mirror circuit CMand the memory cells MCref[1] and MCref[2]. The formula shown belowholds where I_(Cref) is the current supplied from the current sourcecircuit CS to the wiring BLref and I_(CM, 0) is the current dischargedfrom the wiring BLref to the current mirror circuit CM.

I _(Cref) −I _(CM, 0) =I _(MCref[1], 0) +I _(MCref[2],)   (E5)

A current is supplied from the current source circuit CS to the wiringBL[1]. The current flowing through the wiring BL[1] is discharged to thecurrent mirror circuit CM and the memory cells MC[1, 1] and MC[2], ItFurthermore, the current flows from the wiring BL[1] to the offsetcircuit OFST. The formula shown below holds where I_(C, 0) is thecurrent supplied from the current source circuit CS to the wiring BL[1]and I_(α, 0) is the current flowing from the wiring BL[1] to the offsetcircuit OFST.

I _(C) −I _(CM, 0) =I _(MC[1, 1], 0) I _(MC[2, 1], 0) +I _(α, 0)   (E6)

[Product-Sum Operation of First Data and Second Data]

Next, from Time T05 to Time T06, the potential of the wiring RW[1]becomes a potential greater than the reference potential by V_(X[1]). Atthis time, the potential V_(X[1]) is supplied to the capacitors C11 inthe memory cell MC[1, 1] and the memory cell MCref[1], so that thepotentials of the gates of the transistors Tr12 increase owing tocapacitive coupling. Note that the potential V_(X[1]) is the potentialcorresponding to the second data. supplied to the memory cell MC[1, 1]and the memory cell MCref[1].

The amount of change in the potential of the gate of the transistor Tr12corresponds to the value obtained by multiplying the amount of change inthe potential of the wiring RW by a capacitive coupling coefficientdetermined by the memory cell structure. The capacitive couplingcoefficient is calculated using the capacitance of the capacitor C11,the gate capacitance of the transistor Tr12, the parasitic capacitance,and the like. In the following description, for convenience, the amountof change in the potential of the wiring RW is equal to the amount ofchange in the potential of the gate of the transistor Tr12, that is, thecapacitive coupling coefficient is 1. In practice, the potential V_(x)can be determined in consideration of the capacitive couplingcoefficient.

When the potential V_(X[1]) is supplied to the capacitors C11 in thememory cell MC[1, 1] and the memory cell MCref[1], the potentials of thenode NM[1, 1] and the node NMref[1] each increase by V_(X[1].)

Here, a current I_(MC[1, 1]1) flowing from the wiring BL[1] to thetransistor Tr12 in the memory cell MC[1, 1] from Time T05 to Time T06can be expressed by the formula shown below

I _(MC[1, 1], 0) =k(V _(PR) −V _(W[1,1]) +V _(X[1]) −V _(th))²   (E7).

That is, when the potential V_(X[1]) is supplied to the wiring RW[1],the current flowing from the wiring BL[1] to the transistor Tr12 in thememory cell MC[1, 1] increases byΔI_(MC[1, 1])=I_(MC[1, 1])−I_(MC[1, 1],1)−I_(MC[1, 1], 0).

A current I_(MCref[1], 1) flowing from the wiring BLref to thetransistor Tr12 in the memory cell MCref[1] from Time T0S to Time T06can be expressed by the formula shown below

I _(MCref[1], 1) k(V _(PR) +V _(X[1]) −V _(th))²   (E8)

That is, when the potential V_(X[1]) is supplied to the wiring RW[1],the current flowing from the wiring BLref to the transistor Tr12 in thememory cell MCref[1]0 increases byΔI_(MCref)[1]=I_(MCref[1], 1)−I_(MCref[1], 0).

Furthermore, currents flowing through the wiring BL[1] and the wiringBL_(ref) are considered. A current I_(Cref) is supplied from the currentsource circuit CS to the wiring BLref The current flowing through thewiring BLref is discharged to the current mirror circuit CM and thememory cells MCref[1] and MCref[2]. The formula shown below holds whereI_(CM, 1) is the current discharged from the wiring BLref to the currentmirror circuit CM.

I _(Cref) −I _(CM ,1) =I _(MCref[1], 1) +I _(MCref[2], 1)   (E9)

The current I_(C) from the current source circuit CS is supplied to thewiring BL[1]. The current flowing through the wiring BL[1] is dischargedto the current mirror circuit CM and the memory cells MC[1, 1] and MC[2,1]. Furthermore, the current flows from the wiring BL[1] to the offsetcircuit OFST. The formula shown below holds where I_(α, 1) is thecurrent flowing from the wiring BL[1] to the offset circuit OFST.

I _(CM, 1) =I _(CM[1, 1], 1) +I _(MC[2, 1], 1) +I _(α, 1)   (E10)

In addition, from the formula (E1) to the formula (E10), a differencebetween the current I_(α, 0) and the current I_(α, 1) (differentialcurrent ΔI_(α)) can be expressed by the formula shown below

ΔI _(α) =I _(α, 1) −I _(α, 0)=2kV _(W[1, 1]) V _(X[1])  (E11)

Thus, the differential current ΔL_(α) is a value corresponding to theproduct of the potentials V_(W[1, 1]) and V_(X[1].)

After that, from Time T06 to Time T07, the potential of the wiring RW[1]becomes the reference potential, and the potentials of the node NM[1, 1]and the node NMref[1] become similar to the potentials thereof from TimeT04 to Time T05.

Next, from Time T07 to Time T08, the potential of the wiring RW[1]becomes the potential greater than the reference potential by V_(X[1],)and the potential of the wiring RW[2] becomes a potential greater thanthe reference potential by V_(X[1],)Accordingly, the potential V_(X[1])is supplied to the capacitors C11 in the memory cell MC[1, 1] and thememory cell MCref[1], and the potentials of the node NM[1, 1] and thenode NMref[1] each increase by due to capacitive coupling. Furthermore,the potential V_(X[2]) is supplied to the capacitors C11 in the memorycell MC[2, 1] and the memory cell MCref[2], and the potentials of thenode NM[2, 1] and the node NMref[2] each increase by V_(X[2]) due tocapacitive coupling.

Here, the current I_(MC[2, 1], 1) flowing from the wiring BL[1] to thetransistor Tr12 in the memory cell MC[2, 1] from Time T07 to Time T08can be expressed by the formula shown below.

I _(MC[2, 1]1) −k(V _(PR) −V _(w[2, 1]) +V _(X[2]) −V _(th))²   (E12)

That is, when the potential V_([2]) is supplied to the wiring RW[2], thecurrent flowing from the wiring BL[1] to the transistor Tr12 in thememory cell MC[2, 1] increases byΔI_(MC[2, 1])=I_(MC[2, 1])−I_(MC[2, 1], 0).

Here, a current I_(MCref[2], 1) flowing from the wiring BLref to thetransistor Tr12 in the memory cell MCref[2] from Time T07 to Time T08can be expressed by the formula shown below:

I _(MCref[2], 1) =k(V _(PR) +V _(X[2]) −V _(th))²   (E13)

That is, when the potential V_(X[2]) is supplied to the wiring RW[2],the current flowing from the wiring BLref to the transistor Tr12 in thememory cell MCref[2] increases byΔI_(MCref[2])=I_(MCref[2, 1]1)−I_(MCref[2], 0).

Furthermore, currents flowing through the wiring BL[1] and the wiringBLref are considered, The current I_(Cref) is supplied from the currentsource circuit CS to the wiring BLref. The current flowing through thewiring BLref is discharged to the current mirror circuit CM and thememory cells MCref[1] and MCref[2]. The formula shown below holds whereI_(CM, 2) is the current discharged from the wiring BLref to the currentmirror circuit CM.

I _(Cref) = _(CM, 2) =I _(MCref[1], 1) +I _(MCref[2], 1)   (E14)

The current I_(C) is supplied from the current source circuit CS to thewiring BL[1]. The current flowing through the wiring BL[1] is dischargedto the current mirror circuit CM and the memory cells MC[1, 1] and MC[2,1]. Furthermore, the current flows from the wiring BL[1] to the offsetcircuit OFST. The formula shown below holds where I_(α, 2) is thecurrent flowing from the wiring BL[1] to the offset circuit OFST.

I _(C) −I _(CM,2) =I _(MC[1, 1], 1) +I _(MC[2, 1], 1) +I _(α, 2)   (E15)

In addition, from the formula (E1) to the formula (E8) and the formula(E12) to the formula (E15), a difference between the current I_(α, 0)and the current I_(α, 2) (differential current ΔI_(α)) can be expressedby the formula shown below.

ΔI _(α) =I _(α, 2) −I _(α, 0)=2k(V _(W[1, 1]) V _(X[1]) +V _(W[2, 1]) V_(X[2]))   (E16)

Thus, the differential current ΔL _(α) is a value corresponding to thesum of the product of the potential V_(W[1, 1]) and the potentialV_(X[1]) and the product of the potential V_(w[2, 1]) and the potentialV_(X[2]).

After that, from Time T08 to Time 109, the potentials of the wiringsRW[1] and RW[2] become the reference potential, and the potentials ofthe nodes NM[1, 1] and NM[2, 1] and the nodes NMref[l] and NMref[2]become similar to the potentials thereof from Time T04 to Time T05.

As represented by the formula (E11) and the formula (E16), thedifferential current ΔI_(α) input to the offset circuit OFST can becalculated from the formula including a product term of the potentialV_(w) corresponding to the first data (weight) and the potential V_(x)corresponding to the second data (input data). Thus, measurement of thedifferential current ΔL_(α) with the offset circuit OFST gives theresult of the product-sum operation of the first data and the seconddata.

Note that although the memory cells MC[1, 1] and MC[2, 1] and the memorycells MCref[1] and MCref[2] are particularly focused on in the abovedescription, the number of the memory cells MC and the memory cellsMCref can be freely set. In the case where the number m of rows of thememory cells MC and the memory cells MCref is a given number 1, thedifferential current ΔI_(α) can be expressed by the formula shown below

ΔI_(α)=2kΣ_(i)V_(w[i, 1])V_(X[i])  (E17)

When the number n of columns of the memory cells MC and the memory cellsMCref is increased, the number of product-sum operations executed inparallel can be increased.

The product-sum operation of the first data and the second data can beperformed using the semiconductor device MAC as described above. Notethat the use of the structure of the memory cells MC and the memorycells MCref in FIG. 14 allows the product-sum operation circuit to beformed of fewer transistors. Accordingly, the circuit scale of thesemiconductor device MAC can be reduced.

In the case Where the semiconductor device MAC is used for the operationin the neural network, the number in of rows of the memory cells MC cancorrespond to the number of pieces of input data supplied to one neuronand the number n of columns of the memory cells MC can correspond to thenumber of neurons. For example, the case where a product-sum operationusing the semiconductor device MAC is performed in the middle layer HLshown in FIG. I2(A) is considered. In this case, the number m of rows ofthe memory cells MC can be set to the number of pieces of input datasupplied from the input layer IL (the number of neurons in the inputlayer IL), and the number n of columns of the memory cells MC can be setto the number of neurons in the middle layer HL.

Note that there is no particular limitation on the structure of theneural network for which the semiconductor device MAC is used. Forexample, the semiconductor device MAC can also be used for aconvolutional neural network (CNN), a recurrent neural network (RNN), anautoencoder, a Boltzmann machine (including a restricted Boltzmannmachine), or the like.

The product-sum operation of the neural network can be performed usingthe semiconductor device MAC as described above. Furthermore, the memorycells MC and the memory cells MCref shown in FIG. 14 are used for thecell array CA, which can provide an integrated circuit with improvedoperation accuracy, lower power consumption, or a reduced circuit scale.

This embodiment can be combined with the description of the otherembodiments as appropriate.

Embodiment 4

In this embodiment, an OS transistor of one embodiment of the presentinvention and a nonvolatile memory using the OS transistor aredescribed. As the memory 132 described in the above embodiment, anonvolatile memory that uses an OS transistor can be used.

An OS transistor will be described below.

A channel formation region of an OS transistor preferably includes ametal oxide. The metal oxide included in the channel formation regionpreferably contains indium (In). When the metal oxide included in thechannel formation region is a metal oxide containing indium, the carriermobility (electron mobility) of the OS transistor increases. The metaloxide included in the channel formation region is preferably an oxidesemiconductor containing an element M The element M is preferablyaluminum (Al), gallium (Ga), tin (Sn), or the like. Other elements thatcan be used as the element M are boron (B), silicon (Si), titanium (Ti),iron (Fe), nickel (Ni), germanium (Ge), yttrium (Y), zirconium (Zr),molybdenum (Mo), lanthanum (La), cerium (Ce), neodymium (Nd), hafnium(Hf), tantalum (Ta), tungsten (W), and the like. Note that a pluralityof the above-described elements may be used in combination as theelement M. The element M is an element having high bonding energy withoxygen, for example. The element M is an element having higher bondingenergy with oxygen than indium, for example. The metal oxide included inthe channel formation region is preferably a metal oxide containing zinc(Zn). The metal oxide containing zinc is easily crystallized in somecases.

The metal oxide included in the channel formation region is not limitedto a metal oxide containing indium. The semiconductor layer may be ametal oxide that does not contain indium and contains zinc, a metaloxide that contains gallium, a metal oxide that contains tin, or thelike, e.g., zinc tin oxide or gallium tin oxide.

As the memory 132, a memory device that uses an OS transistor can beused. For example, a NOSRAM (registered trademark) or a DOSRAM(registered trademark) which are described below can be used.

A NOSRAM refers to a gain cell DRAM where a write transistor of a memorycell is an OS transistor. NOSRAM is an abbreviation for NonvolatileOxide Semiconductor RAM. A structure example of a NOSRAM is describedbelow.

<NOSRAM>

FIG. 17(A) is a block diagram showing a structure example of a NOSRAM. ANOSRAM 240 includes power domains 242 and 243 and power switches 245 to247. A memory cell array 250 is provided in the power domain 242, and aperipheral circuit of the NOSRAM 240 is provided in the power domain243. The peripheral circuit includes a control circuit 251, a rowcircuit 252, and a column circuit 253.

Voltages VDDD, VSSS, VDHW, VDHR, and VBG2, a clock signal GCLK2, anaddress signal (Address), and signals CE, WE, and PSES are input to theNOSRAM 240 from the outside. The signals CE and WE are a chip enablesignal and a write enable signal, respectively. The signal PSES controlsthe on/off of the power switches 245 to 247. The power switches 245 to247 control the input of the voltages VDDD, VDHW, and VDHR,respectively, to the power domain 243.

Note that the voltages, signals, and the like input to the NOSRAM 240are selected as appropriate in accordance with the circuit structure andthe operation method of the NOSRAM 240. For example, in the NOSRAM 240,a power domain in which power gating is not performed may be providedand a power gating control circuit that generates the signal PSE5 may beprovided.

The memory cell array 250 includes a memory cell 10, a write word lineWWL, a read word line RWL, a write bit line WBL, a read bit line RBL,and a source line SL.

As shown in FIG. 17(B), the memory cell 10 is a 2TIC (two transistorsand one capacitor) gain cell and includes a node SN1, transistors M1 andM2, and a capacitor C1. The transistor M1 is an OS transistor having abackgate and serving as a write transistor. The backgate of thetransistor M1 is electrically connected to a wiring BGL2 that supplies avoltage VBG2. The transistor M2 is a read transistor and is also ap-channel Si transistor. The capacitor C1 is a storage capacitor thatretains the voltage of the node SN1.

The voltages VDDD and VSSS represent data “1” and “0”, respectively.Note that high-level voltages of the write word lines WWL and RWL areVDHW and VDHR, respectively.

FIG. 18(A) shows a structure example of the memory cell array 250. Inthe memory cell array 250 shown in FIG. 18(A), one source line issupplied to the adjacent two rows.

The memory cell 10 does not have a limit on the number of times ofrewriting in principle, can perform data rewriting with low energy, anddoes not consume power in retaining data. Since the transistor M1 is anOS transistor with an extremely low off-state current, the memory cell10 can retain data for a long time. Thus, a cache memory deviceincluding the NOSRAM 240 can be a low-power nonvolatile memory device.

The circuit structure of the memory cell 10 is not limited to thecircuit structure shown in FIG. 17(B). For example, the read transistorM2 may be an OS transistor having a backgate or n-channel Si transistor.Alternatively, the memory cell 10 may be a 3T gain cell. For example,FIG. 18(B) and FIG. 18(C) show examples of a 3T gain cell. A memory cell15 shown in FIG. 18(B) includes transistors M3 to MS, a capacitor C3,and a node SN3. The transistors M3 to M5 are a write transistor, a readtransistor, and a selection transistor, respectively. The transistor M3is an OS transistor having a backgate, and the transistors M4 and M5 arep-channel Si transistors. The transistors M4 and M5 may be n-channel Sitransistors or OS transistors each having a backgate. In a memory cell16 shown in FIG. 18(C), three transistors are OS transistors each havinga backgate.

The node SN3 is a retention node. One electrode of the capacitor C3 iselectrically connected to the node SN3 and has a function of retainingthe voltage of the node SN3. The other electrode of the capacitor C3 iselectrically connected to a wiring CNL. The capacitor C3 may he omittedintentionally, and the storage capacitor may be formed using gatecapacitance of the transistor M4, or the like. A fixed voltage (e.g.,VDDD) is input to a wiring PDL. The wiring PDL is an alternative to thesource line SL, and a fixed voltage (e.g., the voltage VDDD) is input.The voltage VDDD is also input to the wiring CNL, for example.

The control circuit 251 has a function of controlling the entireoperation of the NOSRAM 240. For example, the control circuit 251performs logical operation of the signals CE and WE and determineswhether access from the outside is write access or read access.

The row circuit 252 has a function of selecting the write word line WWLand the read word line RWL in the row specified and selected by theaddress signal. The column circuit 253 has a function of writing data tothe write bit line WBL in the column specified by the address signal anda function of reading data from the read bit line RBL in that column.

<DOSRAM>

A DOSRAM refers to a RAM including a 1T1C memory cell and is anabbreviation for Dynamic Oxide Semiconductor RAM. A DOSRAM is describedbelow with reference to FIG. 19.

As illustrated in FIG. 19(A), the memory cell 16 of a DOSRAM 350 iselectrically connected to a bit line BL (or BLB), a word line WL, andwirings BGL6 and PL. The bit line BLB is an inverted hit line; forexample, voltages VBGC and VSSS are input to the wirings BGL6 and PL. Atransistor MC and a capacitor C6 are included. The transistor M6 is anOS transistor including a backgate.

There is theoretically no limitation on the number of rewritingoperations of the DOSRAM 350 because data is rewritten by charging anddischarging of the capacitor C6; and data can be written and read withlow energy. In addition, the memory cell 16 has a simple circuitstructure, and thus the capacity can be easily increased. Since thewrite transistor of the memory cell 16 is an OS transistor, theretention time of the DOSRAM 350 is significantly longer than that of aDRAM. This allows less frequent refresh or makes refresh operationsunnecessary; thus, the power needed for refresh operations can bereduced.

As illustrated in FIG. 19(B), in the DOSRAM 350, a memory cell array 360can be stacked over a peripheral circuit 365. This is because thetransistor M6 of the memory cell 16 is an OS transistor.

In the memory cell array 360, a plurality of memory cells 16 arearranged in a matrix, and the bit lines BL and BLB, the word line WL,and the wirings BGL6 and PL are provided according to the arrangement ofthe memory cells 16. The peripheral circuit 365 is provided with acontrol circuit, a row circuit, and a column circuit. The row circuitperforms selection of a word line WI. to be accessed, for example. Thecolumn circuit performs writing and reading of data to/from a bit linepair formed of BL and BLB, for example.

Power switches 371 and 372 are provided in order to power gate theperipheral circuit 365. The power switches 371 and 372 control input ofa voltage VDDD and input of a voltage VDHW6, respectively, to theperipheral circuit 365. Note that the voltage VDHW6 is a high-levelvoltage for the word line WL. On/off of the power switches 371 and 372is controlled with a signal PSE6. For example, the signal PSE6 isgenerated by a PMU 113.

This embodiment can be implemented in combination with the otherembodiments as appropriate.

Embodiment 5

In this embodiment, examples of the electronic devices described in theabove embodiments are described.

FIG. 20(A) and FIG. 20(B) show an example of a double-foldable tabletterminal. A tablet terminal 9600 shown in FIG. 20(A) and FIG. 20(3)includes a housing 9630 a, a housing 9630 b, a movable portion 9640connecting the housing 9630 a and the housing 9630 b, a display portion9631, a display mode changing switch 9626, a power switch 9627, a powersaving anode changing switch 9625, a fastener 9629, and an operationswitch 9628. The use of a flexible panel for the display portion 9631enables a tablet terminal with a larger display portion. FIG. 20(A)shows the tablet terminal 9600 that is opened, and FIG. 20(B) shows thetablet terminal 9600 that is closed.

The tablet terminal 9600 includes a storage battery 9635 inside thehousing 9630 a and the housing 9630 b. The storage battery 9635 isprovided across the housing 9630 a and the housing 9630 b, passingthrough the movable portion 9640.

Part of the display portion 9631 can be a touch panel region and datacan be input when a displayed operation key is touched. When a positionwhere a keyboard display switching button is displayed on the touchpanel is touched with a finger, a stylus, or the like, keyboard buttonscan be displayed on the display portion 9631.

The display mode changing switch 9626 can switch the display between aportrait mode and a landscape mode, and between monochrome display andcolor display, for example. The power saving mode changing switch 9625can control display luminance in accordance with the amount of externallight in use, which is measured with an optical sensor incorporated inthe tablet terminal 9600. Another detection device including a sensorfor detecting inclination, such as a gyroscope sensor or an accelerationsensor, may be incorporated in the tablet terminal, in addition to theoptical sensor.

FIG. 20(B) illustrates a closed state, and the tablet terminal 9600includes the housing 9630, a solar cell 9633, the storage battery 9635,a coil 9641, and a control circuit 9634. The control circuit 9634includes a protection circuit 9639 and a charging and dischargingcontrol circuit 9638 including a DC-DC converter 9636. Furthermore, thecontrol circuit 9634 preferably includes an IC including a CPU, a GPU, aneural network, or the like, an IC having a function of controllingwireless power feeding via a coil, a communication module, or the like.

The tablet terminal 9600 can be folded in half and thus can be foldedsuch that the housing 9630 a and the housing 9630 b overlap with eachother when not in use. The display portion 9631 can be protected owingto the folding, which increases the durability of the tablet terminal9600.

The tablet terminal shown in FIG. 20(A) and FIG. 20(B) can also have afunction of displaying various kinds of data (a still image, a movingimage, a text image, and the like), a function of displaying a calendar,a date, the time, or the like on the display portion, a touch-inputfunction of operating or editing data displayed on the display portionby touch input, a function of controlling processing by various kinds ofsoftware (programs), and the like.

The solar cell 9633, which is attached on the surface of the tabletterminal, can supply electric power to a touch panel, a display portion,an image signal processor, and the like. Note that the solar cell 9633can be provided on one or both surfaces of the housing 9630 and thestorage battery 9635 can be charged efficiently.

The structure and operation of the control circuit 9634 shown in FIG.20(B) will be described with reference to a block diagram in FIG. 20(C).FIG. 20(C) shows the solar cell 9633, the storage battery 9635, theDC-DC converter 9636, a converter 9637, switches SW1 to SW3, and thedisplay portion 9631; the DC-DC converter 9636, the converter 9637, andthe switches SW1 to SW3 correspond to the charging and dischargingcontrol circuit 9638 shown in FIG. 20(B); and the charging anddischarging control circuit 9638 and the protection circuit 9639correspond to the control circuit 9634.

First, an example of the operation in the case where power is generatedby the solar cell 9633 using external light is described. The voltage ofelectric power generated by the solar cell 9633 is raised or lowered bythe DC-DC converter 9636 to a voltage for charging the storage battery9635. When the electric power from the solar cell 9633 is used for theoperation of the display portion 9631, the switch SW I is turned on andthe voltage of the electric power is raised or lowered by the converter9637 to a voltage needed for the display portion 9631. When display onthe display portion 9631 is not performed, SW1 is turned off and SW2 isturned on, so that the storage battery 9635 can be charged.

Note that the solar cell 9633 is described as an example of a powergeneration means; however, one embodiment of the present invention isnot limited to this example. The storage battery 9635 may be chargedusing another power generation means such as a piezoelectric element ora thermoelectric conversion element (Peltier element). For example,charging may be performed with a non-contact power transmission modulethat transmits and receives electric power wirelessly (without contact),or with a. combination of other charging means.

FIGS. 21(A) to 21(G) show examples of an electronic device of oneembodiment of the present invention. Examples of an electronic device ofone embodiment of the present invention include television devices (alsoreferred to as televisions or television receivers), monitors ofcomputers or the like, digital cameras, digital video cameras, digitalphoto frames, mobile phones (also referred to as cellular phones ormobile phone devices), portable game machines, portable informationterminals, audio reproducing devices, and large game machines such aspachinko machines.

FIG. 21(A) shows an example of a mobile phone. A mobile phone 7400 isprovided with operation buttons 7403, an external connection port 7404,a speaker 7405, a microphone 7406, and the like in addition to a displayportion 7402 incorporated in a housing 7401.

FIG. 21(B) shows the mobile phone 7400 that is bent. When the wholemobile phone 7400 is bent by external force, the storage battery 7407provided therein may also be bent. In such a case, a flexible storagebattery is preferably used as the storage battery 7407. FIG. 21(C) showsthe flexible storage battery 7407 that is bent.

Furthermore, the mobile phone 7400 preferably includes an IC including aCPU, a GPU, a neural network, or the like, an IC having a function ofcontrolling wireless power feeding via a coil, a communication module,or the like.

A flexible storage battery can also be incorporated along a curvedinside/outside wall surface of a house or a building or a curvedinterior/exterior surface of an automobile.

FIG. 21(D) illustrates an example of a bangle-type display device. Aportable display device 7100 includes a housing 7101, a display portion7102, operation buttons 7103, and a storage battery 7104. Furthermore,the mobile phone 7400 preferably includes an IC including a CPU, a GPU,a neural network, or the like, an IC having a function of controllingwireless power feeding via a coil, a communication module, or the like.

FIG. 21(E) shows an example of a watch-type portable informationterminal. A portable information terminal 7200 includes a housing 7201,a display portion 7202, a band 7203, a buckle 7204, an operation button7205, an input/output terminal 7206, and the like.

The portable information terminal 7200 is capable of executing a varietyof applications such as mobile phone calls, e-mailing, viewing andediting texts, music reproduction, Internet communication, and computergames.

The display surface of the display portion 7202 is curved, and imagescan be displayed on the curved display surface. The display portion 7202includes a touch sensor, and operation can be performed by touching thescreen with a finger, a stylus, or the like. For example, by touching anicon 7207 displayed on the display portion 7202, application can bestarted.

With the operation button 7205, a variety of functions such as timesetting, power on/off, on/off of wireless communication, setting andcancellation of a silent mode, and setting and cancellation of a powersaving mode can be performed. For example, the functions of theoperation button 7205 can be set freely by setting the operation systemincorporated in the portable information terminal 7200.

The portable information terminal 7200 can employ near fieldcommunication based on an existing communication standard. For example,when mutual communication between the portable information terminal anda headset capable of wireless communication is performed, hands-freecalling is possible.

The portable information terminal 7200 includes the input/outputterminal 7206, and data can be directly transmitted to and received fromanother information terminal via a connector. In addition, charging viathe input/output terminal 7206 is possible. The charging operation maybe performed by wireless power feeding without using the input/outputterminal 7206.

The portable information terminal 7200 includes a storage battery.Furthermore, the portable information terminal 7200 preferably includesan IC including a CPU, a GPU, a neural network, or the like, an IChaving a function of controlling wireless power feeding via a coil, acommunication module, or the like.

The portable information terminal 7200 preferably includes a sensor. Asthe sensor, for example, a human body sensor such as a fingerprintsensor, a pulse sensor, or a temperature sensor, a touch sensor, apressure sensor, an acceleration sensor, or the like is preferablymounted.

This embodiment can be combined with the description of the otherembodiments as appropriate.

REFERENCE NUMERALS

10: memory cell, 15: memory cell, 16: memory cell, 113: PMU, 120:electronic device, 120 a:

electronic device, 120 b: electronic device, 132: memory, 133: server,135: storage battery, 135 a: storage battery, 135 b: storage battery,137: protection circuit, 139: housing, 140: power feeding device, 140 a:power feeding device, 140 b: power feeding device, 141: motor, 141 a:motor, 141 b: motor, 147: transistor, 148: transistor, 161: block, 162:adapter, 171: charge control circuit, 174: sensor element, 176: fuse,182: control circuit, 183: coil. 183 a: coil, 183 b: coil, 185: coil,186: control circuit, 187: position detection coil, 187 a: positiondetection coil, 187 b: position detection coil, 188: antenna, 189:antenna, 190: chip group, 191: IC, 192: IC, 193: IC, 194: memory, 195:memory, 240: NOSRAM, 242: power domain, 243: power domain, 245: powerswitch, 247: power switch, 250: memory cell array, 251: control circuit,252: row circuit, 253: column circuit, 350: DOSRAM, 360: memory cellarray, 365: peripheral circuit, 371: power switch, 372: power switch,6200: information terminal, 6221 a: housing, 6221 b: housing, 6221 c:housing, 6222: display portion, 6223 a: operation button, 6223 b:operation button, 6223 c: operation button. 6224: speaker, 6226: camera,6228: storage battery, 6229: coil, 6231: IC, 6232: IC, 6233: IC, 6234:memory, 6235: memory, 6236: antenna, 7100: portable display device,7101: housing, 7102: display portion, 7103: operation button, 7104:storage battery, 7200: portable information terminal, 7201: housing,7202: display portion, 7203: band, 7204: buckle, 7205: operation button,7206: input/output terminal, 7207: icon, 7400: mobile phone, 7401:housing, 7402: display portion, 7403: operation button, 7404: externalconnection port, 7405: speaker, 7406: microphone, 7407: storage battery,9600: tablet terminal, 9625: switch, 9626: switch, 9627: power switch,9628: operation switch, 9629: fastener, 9630: housing, 9630 a: housing,9630 b: housing, 9631: display portion, 9633: solar cell, 9634: controlcircuit, 9635: storage battery, 9636: DC-DC converter, 9637: converter,9638: charging and discharging control circuit, 9639: protectioncircuit, 9640: movable portion, 9641: coil

1. A power feeding device comprising: a power feeding coil; a controlcircuit; and a neural network, wherein the power feeding device isconfigured to charge a storage battery with a wireless signal suppliedby the power feeding coil, wherein the control circuit is configured toestimate a remaining capacity value of the storage battery, wherein thecontrol circuit is configured to supply the estimated remaining capacityvalue to the neural network, wherein the neural network outputs a valuecorresponding to the supplied remaining capacity value to the controlcircuit, and wherein the control circuit is configured to determine acharge condition for the storage battery on the basis of the value andcharge the storage battery under the determined charge condition.
 2. Apower feeding device comprising: a power feeding coil; a controlcircuit; and a neural network, wherein the power feeding device isconfigured to charge a first storage battery and a second storagebattery with a wireless signal supplied by the power feeding coil,wherein the control circuit is configured to estimate a remainingcapacity value of the first storage battery and a remaining capacityvalue of the second storage battery, wherein the control circuit isconfigured to supply the estimated remaining capacity value of the firststorage battery and the estimated remaining capacity value of the secondstorage battery to the neural network, wherein the neural networkoutputs a first value corresponding to the supplied remaining capacityvalue of the first storage battery and a second value corresponding tothe supplied remaining capacity value of the second storage battery tothe control circuit, and wherein the control circuit is configured toselect either the first storage battery or the second storage battery onthe basis of the first value and the second value and charge theselected storage battery.
 3. A system comprising: a storage battery; anda power feeding device, wherein the storage battery is charged by thepower feeding device, wherein the power feeding device comprises a powerfeeding coil, a control circuit, and a neural network, wherein the powerfeeding device is configured to charge the storage battery with awireless signal supplied by the power feeding coil, wherein the controlcircuit is configured to estimate a remaining capacity value of thestorage battery, wherein the control circuit is configured to supply theestimated remaining capacity value to the neural network, wherein theneural network outputs a value corresponding to the supplied remainingcapacity value to the control circuit, wherein the control circuit isconfigured to determine a charge condition for the storage battery onthe basis of the output value, and wherein the power feeding device isconfigured to charge the storage battery under the determined chargecondition.
 4. An operation method of a power feeding device comprising apower feeding coil, a control circuit, and a neural network, wherein aplurality of storage batteries each having an individual identificationnumber are provided in the neighborhood of the power feeding device,wherein the power feeding device is configured to charge at least one ofthe plurality of storage batteries with a wireless signal supplied bythe power feeding coil, the operation method comprising: a first step inwhich the control circuit estimates a remaining capacity value of eachof the plurality of storage batteries; a second step in which thecontrol circuit supplies the estimated remaining capacity value of eachof the plurality of storage batteries to the neural network; a thirdstep in which the neural network outputs values corresponding to thesupplied remaining capacity value of each of the plurality of storagebatteries to the control circuit; a fourth step in which the controlcircuit selects which of the plurality of storage batteries to charge onthe basis of the output values and charges the selected storage battery;and a fifth step in which the control circuit stops charging of theselected storage battery, the first step to the fifth step being onecycle, wherein the one cycle is repeated a plurality of times, wherein aset of data in which the individual identification number and theremaining capacity value estimated in the first step are linked witheach other is accumulated in the control circuit in the second stepevery repeated cycle, and wherein a charge condition is determined usingthe accumulated set of data in the fourth step.
 5. The operation methodof a power feeding device, according to claim 4, wherein the controlcircuit measures time of a clock included in the power feeding device orthe storage battery in the first step, and wherein a set of data inwhich the individual identification number, the remaining capacity valueestimated in the first step, and the time are linked with each other isaccumulated in the control circuit in the second step.
 6. The operationmethod of a power feeding device, according to claim 4, wherein thecontrol circuit comprises a memory, wherein the set of data in which theindividual identification number and the remaining capacity valueestimated in the first step are linked with each other is accumulated inthe memory in the second step, and wherein the memory comprises atransistor including a metal oxide containing indium in a channelformation region.